Real-time monitoring device and operation method thereof

ABSTRACT

A real-time monitoring device includes a microcomputer, a conductor, and a capacitor. The microcomputer monitors changes during plasma processing in a potential of a semiconductor wafer surface that are read by a sensor. The conductor is disposed in a vicinity of the microcomputer. The capacitor connects the conductor and a power supply connection terminal of the microcomputer.

CROSS-REFERENCE TO RELATED APPLICATION

This application claims priority under 35 USC 119 from Japanese PatentApplication No. 2008-001596, the disclosure of which is incorporated byreference herein.

BACKGROUND OF THE INVENTION

1. Field of the Invention

The present invention relates to a real-time monitoring device andoperation method thereof, and in particular, relates to, in asemiconductor fabricating process, the control of the collecting,storing and transmitting of physical amounts that are generated at aplasma processing device.

2. Description of the Related Art

In order to simplify plasma processing that is used in a semiconductorfabricating process and to fabricate a semiconductor with highprecision, it is very important to maintain high quality and high yieldof high-performance semiconductors.

Thus, there has been proposed a method of transmitting the change in thepotential or current of a self bias voltage Vdc or the like, that isgenerated during surface treatment of a semiconductor that uses plasma,to the exterior of a plasma chamber as a signal expressing the change inthe light emitting intensity of a light emitting element (refer toJapanese Patent Application Laid-Open (JP-A) No. 2002-100617).

Further, a structure has been proposed that enables online monitoring(observation, measurement, or supervision) at the position of asubstrate (wafer) that is an object of processing, in the surfacetreatment of a semiconductor that uses plasma (refer to JP-A No.2003-282546).

There has also been proposed a structure in which, by forming anelectromagnetic shielding layer at the surface or at the interior of aresin for circuit protection that is injected into an electronic device,can prevent malfunctioning of the electronic device in a high frequencyelectric field, and can reduce the costs low (refer to JP-A No.07-263888).

However, at the time of surface treatment of a semiconductor that usesplasma, there are cases in which, depending on the resolution of thechange in the light emitting intensity of the light emitting element onthe wafer, it is difficult to differentiate between normal values andabnormal values. Further, it is difficult to quantitatively grasp suddenchanges in the transient state during the several seconds immediatelyafter plasma generation. In more detail, generally, a light emittingdiode carries out operation in the range of from about 0V to 5V, butdoes not emit light at less than or equal to forward drop voltage(approximately 2V). For example, in the case of a plasma condition inwhich the self bias voltage Vdc changes from 0V to 500V, in order tooperate a light emitting diode by using the self bias voltage Vdc, theself bias voltage Vdc must be supplied to the light emitting diode afterbeing reduced by about 1/100. In this case, if the self bias voltage Vdcis from 0V to less than or equal to about 200V, there is the possibilitythat data cannot be transferred because the light emitting element doesnot emit light normally. Even in cases in which the light emittingelement does emit light, it is presumed that there will be a very weakchange in light emitting intensity, and therefore, accurate andhighly-reproducible measurement is difficult.

Because the change in the light emitting intensity of the light emittingelement is used as a signal, this technique cannot be applied in aplasma chamber in which the signal light path cannot be providedappropriately. This shows that the light that is the signal cannot beobserved, for example, in cases in which there is no observation windowat the plasma chamber, or in cases in which, at the time of the waferprocessing, the stage on which the wafer is located is moved for plasmaprocessing and can no longer be viewed from the observation window, orthe like.

Further, a high frequency electric field (magnetic field) is generatedin the space within the plasma chamber where high frequency plasmatypified by 13.56 MHz is generated, and the electronic circuit does notoperate normally. Therefore, in order to operate an, electronic circuitin a high frequency electric field, there is a method of coating thesurface thereof with a particular resin material. However, if the entireelectronic circuit, including the power supply, is coated with aparticular resin material, it is difficult to replace worn members orbroken-down parts such as the power supply or the like.

The plasma parameters, such as the self bias voltage Vdc and the like,are affected by the amount of the secondary electrons that are suppliedfrom the material that is exposed to the plasma, and by the types of andthe generated amounts of reaction products generated by the reactionwith this material. There is the possibility that, by using a particularresin material that is not used in a semiconductor fabricating device, aplasma, that is different than the plasma used in the semiconductormanufacturing process, will become the object of measurement.

SUMMARY OF THE INVENTION

The present invention has been made in view of the above circumstancesand provides a real-time monitoring device and operation method thereofthat can stably collect plasma parameters from immediately after plasmageneration and outputted data of a sensor that measures the potential ofa processed wafer surface, and can and store them in a memory andtransfer them to the exterior of a plasma chamber.

A first aspect of the present invention provides a real-time monitoringdevice including, a microcomputer that monitors changes during plasmaprocessing in a potential of a semiconductor wafer surface that are readby a sensor, a conductor disposed in a vicinity of the microcomputer,and a capacitor that connects the conductor and a power supplyconnection terminal of the microcomputer.

A second aspect of the present invention provides a real-time monitoringdevice including, a microcomputer that collects sensor outputs ofsensors that are disposed at respective locations within a semiconductorfabricating device and that, in a plasma process used in a semiconductorfabricating process, sense and measure at least one of plasma parametersincluding self bias voltage, a potential of a plasma processed wafersurface, or a potential generated within a fine pattern, and a conductordisposed in a vicinity of a circuit whose main body is the microcomputerand that comprises a plurality of electronic parts. The conductor and apower supply connection terminal of the microcomputer are connected viaa capacitor, the microcomputer being part of a microcomputer circuitthat controls a monitoring operation of sensor outputs in the plasmaprocess.

A third aspect of the present invention provides a real-time monitoringdevice including a microcomputer that monitors changes during plasmaprocessing in a potential of a semiconductor wafer surface that are readby a sensor, and a connecting portion of a direct current power supplythat is supplied to the microcomputer has a potential equal to a highfrequency voltage induced by plasma.

A fourth aspect of the present invention provides a real-time monitoringdevice including, a microcomputer that collects sensor outputs ofsensors that are disposed at respective locations within a semiconductorfabricating device and that, in a plasma process used in a semiconductorfabricating process, sense and measure at least one of plasma parametersincluding self bias voltage, a potential of a plasma processed wafersurface, or a potential generated within a fine pattern, and a conductoris disposed in a vicinity of a circuit whose main body is themicrocomputer and that comprises a plurality of electronic parts, and aconnecting portion of a direct current power supply supplied to themicrocomputer is connected by a capacitor to the conductor, themicrocomputer being part of a microcomputer circuit that controls amonitoring operation of sensor outputs in the plasma process, and theconductor having a potential equal to a high frequency voltage inducedby plasma, when there is an unused terminal at the microcomputer, theunused terminal is directly connected to the conductor or is connectedto a negative power supply portion via a resistor, and operationallyunstable signal transmitting and receiving operations caused by a highfrequency electric field of the microcomputer circuit are stabilized.

A fifth aspect of the present invention provides a control method formeasuring a potential used in a microcomputer circuit in a real-timemonitoring device, the real-time monitoring device including, amicrocomputer that collects sensor outputs of sensors that are disposedat respective locations within a semiconductor fabricating device andthat, in a plasma process used in a semiconductor fabricating process,sense and measure at least one of plasma parameters including self biasvoltage, a potential of a plasma processed wafer surface, or a potentialgenerated within a fine pattern, and a conductor disposed in a vicinityof a circuit whose main body is the microcomputer and that comprises aplurality of electronic parts, where the conductor and a power supplyconnection terminal of the microcomputer are connected via a capacitor,the microcomputer being part of a microcomputer circuit that controls amonitoring operation of sensor outputs in the plasma process, and themethod including, inputting the sensor outputs, performing AD conversionthat converts the sensor outputs from analog signals into digitalsignals, storing measurement data corresponding to digital signals ofthe AD-converted sensor outputs, and in accordance with a specificsignal, performing IR transmission that transmits, by infrared rays, thestored measurement data.

A sixth aspect of the present invention provides a real-time monitoringdevice that collects sensor outputs of sensors that are disposed atrespective locations within a semiconductor fabricating device and that,in a plasma process used in a semiconductor fabricating process, senseand measure at least one of plasma parameters including self biasvoltage, a potential of a plasma processed wafer surface, or a potentialgenerated within a fine pattern, the real-time monitoring devicecomprising, a microcomputer, a power supply section, a capacitor, aninfrared ray receiving unit, and an infrared ray transmitting unit, amicrocomputer circuit in which a conductor is disposed in a vicinity ofthe microcomputer, a control signal transmitting section that transmitsa control signal generated by infrared rays for controlling themicrocomputer circuit, such that the control signal is received by theinfrared ray receiving unit, a sensor output receiving section thatreceives, from the infrared ray receiving unit, the sensor outputs fromthe infrared ray transmitting unit of the microcomputer circuit, and ananalyzing section that analyzes the sensor outputs received by thesensor output receiving section. On the basis of the control signal fromthe control signal transmitting section, the microcomputer circuitacquires the sensor outputs, and stores the acquired sensor outputstemporarily in a sensor output storing section, and, on the basis of thecontrol signal from the control signal transmitting section, themicrocomputer circuit transmits the sensor outputs by using the infraredray transmitting unit.

A seventh aspect of the present invention provides a real-timemonitoring device including, a microcomputer that collects sensoroutputs of sensors that are disposed at respective locations within asemiconductor fabricating device and that, in a plasma process used in asemiconductor fabricating process, sense and measure at least one ofplasma parameters including self bias voltage, a potential of a plasmaprocessed wafer surface, or a potential generated within a fine pattern,and a conductor disposed in a vicinity of a circuit whose main body isthe microcomputer and that comprises a plurality of electronic parts.The conductor and a power supply connection terminal of themicrocomputer are connected via a capacitor, the microcomputer beingpart of a microcomputer circuit that controls a monitoring operation ofsensor outputs in the plasma process, and the microcomputer circuitincludes an inputting section that inputs the sensor outputs, an ADconverting section that performs AD conversion that converts the sensoroutputs inputted by the inputting section from analog signals intodigital signals, a storing section that stores measurement datacorresponding to digital signals of the AD-converted sensor outputs bythe AD converting section, an IR transmitting section that performs, inaccordance with a specific signal, IR transmission that transmits, byinfrared rays, the stored measurement data, and a control section thatcontrols the inputting section, the AD converting section, the storingsection and the IR transmitting section, the control section thatexecutes the AD conversion, the storing of the AD-converted measurementdata, and, in response to the specific signal, the IR transmission ofthe stored measurement data.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a circuit diagram of a microcomputer control device relatingto a first exemplary embodiment;

FIG. 2 is a substrate sectional view of the microcomputer control devicerelating to the first exemplary embodiment;

FIG. 3 is a first block diagram of the microcomputer control devicerelating to the first exemplary embodiment;

FIG. 4 is a second block diagram of a microcomputer receiver of themicrocomputer control device relating to the first exemplary embodiment;

FIG. 5 is a block diagram of a real-time monitoring device relating to asecond exemplary embodiment;

FIG. 6 is a signal block diagram of a remote controller relating to thesecond exemplary embodiment;

FIG. 7 is a signal block diagram of a microcomputer transmitter relatingto the second exemplary embodiment;

FIG. 8 is a signal block diagram of a microcomputer receiver, a USBinterface and a PC relating to the second exemplary embodiment;

FIG. 9 is a first flowchart showing control of the remote controllerrelating to the second exemplary embodiment;

FIG. 10 is a second flowchart showing control of the microcomputertransmitter relating to the second exemplary embodiment; and

FIG. 11 is a third flowchart showing control of the microcomputerreceiver relating to the second exemplary embodiment.

DETAILED DESCRIPTION OF THE INVENTION First Exemplary Embodiment

FIG. 1 is a circuit diagram of a microcomputer circuit 100 that includesa microcomputer 110 relating to a first exemplary embodiment.

The microcomputer circuit 100 is structured by the microcomputer 110, amicrocomputer receiver 120, a resistor element 130 a, an infrared lightemitting diode (hereinafter called infrared LED) 130 b, a powersupplying section 140, an IR (InfraRed ray) signal receiving module 150,a USB (Universal Serial Bus) serial interface 160, capacitors 170 a, 170b, 170 c, 170 d, a sensor signal receiving module 180, and a copper tape190.

Note that the microcomputer 110 is an 8-pin-type IC (IntegratedCircuit), and terminals for connection, that are a first pin 111, asecond pin 112, a third pin 113, a fourth pin 114, a fifth pin 115, asixth pin 116, a seventh pin 117 and an eighth pin 118, are set thereat.The copper tape 190 may be any type of form configuration and materialprovided that it is a conductor (a conductor plate), and, for example,aluminum tape or the like may be used. Further, the microcomputer 110 isa PIC (Peripheral Interface Controller: an IC for connection and controlof peripheral devices).

At the microcomputer 110, the first pin 111 is connected to the negativeside (the −side) of the power supplying section 140, and the eighth pin118 is connected to the positive side (the +side) of the power supplyingsection 140. Further, at the microcomputer 110, the first pin 111 isconnected to the copper tape 190 via the capacitor 170 b, and the eighthpin 118 is connected to the copper tape 190 via the capacitor 170 a.Moreover, at the microcomputer 110, the third pin 113 is connected tothe sensor signal receiving module, the fourth pin 114 is connected tothe microcomputer receiver 120, and the seventh pin 117 is connected isconnected to one infrared LED circuit 130 to which the resistor element130 a and the infrared LED 130 b are connected. Also at themicrocomputer 110, the second pin 112, the fifth pin 115 and the sixthpin 116 are directly connected to the copper tape 190. Note that theother infrared LED circuit 130, that is structured by the resistorelement 130 a and the infrared LED 130 b being connected, is connectedto the negative side of the power supplying section 140.

The microcomputer receiver 120 is connected to the fourth pin 114 of themicrocomputer 110 and the IR signal receiving module 150. Themicrocomputer receiver 120 is connected to the positive side of thepower supplying section 140, and further, that wire (the wire connectingthe microcomputer receiver 120 and the positive side of the powersupplying section 140) is connected to the copper tape 190 via thecapacitor 170 c. The microcomputer receiver 120 is connected to thenegative side of the power supplying section 140, and further, that wire(the wire connecting the microcomputer receiver 120 and the negativeside of the power supplying section 140) is connected to the copper tape190 via the capacitor 170 d.

The microcomputer circuit 100 is a circuit in which, in accordance witha program stored in a memory 360 that is installed in the microcomputer110, the infrared LED 130 b flashes on-and-off in accordance with asignal pattern determined by a given cycle program.

The copper tape 190 is affixed to a vicinity of the outer periphery ofthe microcomputer 110. The copper tape 190 and both of the positive sideand the negative side of the power supplying section 140 of themicrocomputer 110 are connected via the capacitors 170 a (the positiveside), 170 b (the positive side) of capacities of about 0.1 uF forexample, such that the connecting portion of a DC power supply that issupplied to the microcomputer 110 is the same potential as highfrequency voltage that is induced by the plasma.

A non-used terminal that is not used in operation of the microcomputer110 of the first exemplary embodiment (hereinafter called the NC pin(Non Connection pin)) is directly connected to the copper tape 190. Notethat the terminal of the NC pin and the copper tape 190 may be connectedto the negative power supply side of the power supplying section 140 viaa resistor element.

In order to ensure electrical insulation (cutting of the DC component)of the microcomputer circuit 100 that includes the microcomputer 110,the reverse surface side of the substrate forming the microcomputercircuit 100 (the soldering processing side) is covered by Kapton tape210 (a polyimide tape for heat-resistance and insulation shown in FIG.2).

A substrate sectional view 200 of the microcomputer circuit 100 relatingto the first exemplary embodiment is shown in FIG. 2.

The substrate sectional view 200 shows a cross-sectional view of thesubstrate of the circuit diagram of the microcomputer circuit 100 shownin FIG. 1, and is structured by the microcomputer 110, the infrared LED130 b, the copper tape 190, a substrate 220 and the Kapton tape 210.Further, the substrate 220, on which the microcomputer 110, the infraredLED 130 b and the copper tape 190 are outfitted, is covered by theKapton tape 210.

At the substrate obverse side at which electronic parts such as themicrocomputer 110 and the like are disposed, a single-layer covering ofthe Kapton tape 210 is provided, in the same way as at the reverse, inorder to prevent flowing of charged particles such as ions and the likefrom the plasma, and reactive radicals and reaction products. Note that,although the Kapton tape 210 is used here, it is better to use a thinsheet or tape of a Teflon™ material that is used in semiconductorfabricating devices.

The microcomputer circuit 100 is set within a plasma chamber (not shown)of a semiconductor fabricating device, and a high frequency plasma isgenerated. At this time, a high frequency electric field, that is causedby the high frequency power supply frequency for generating the highfrequency plasma, acts on the space within the plasma chamber andmaintains the plasma, and simultaneously, the microcomputer circuit 100as well is exposed to this high frequency electric field. Therefore,high frequency electromotive force arises at the microcomputer 110, thecopper tape 190 at the periphery of the microcomputer 110, and theconductors included in the microcomputer circuit 100. The magnitude ofthe high frequency electromotive force that is generated differs inaccordance with the magnetic characteristics such as the permeabilityand the like of the material. Therefore, a difference arises in themagnitude of the high frequency electromotive force that is generatedwithin the microcomputer circuit 100 that is structured by pluralelectrically-conductive materials, and a potential difference of thehigh frequency electromotive force arises. High frequency current flowswithin the microcomputer circuit 100 in accordance with this potentialdifference.

In accordance with the structure of the present invention, the highfrequency electromotive force, that is generated in a vicinity of themicrocomputer circuit 100, arises at the copper tape 190. Due to thiselectromotive force being connected to both the positive side and thenegative side of the power supplying section 140 of the microcomputer110 via the capacitors 170 a (the positive side), 170 b (the negativeside), the interior of the microcomputer circuit 100 and the highfrequency electromotive force generated at the copper tape 190 becomethe same potential. Note that, at this time, the positive side capacitor170 a and the negative side capacitor 170 b become bypass capacitors,and function to remove the DC component and transmit only the ACcomponent (be conductive in terms of high frequency), and therefore, thehigh frequency electromotive force becomes equal.

Note that, the greater the surface area of the copper tape 190 that is aconductor (conductor plate) disposed at the periphery of the vicinity ofthe microcomputer circuit 100, the larger the generated high frequencyelectromotive force can be made to be. Therefore, it is preferable tomake the surface area as large as possible. If the conductor surfacearea is made to be large, the impedance becomes small, and due thereto,the impedance of the conductor overall becomes small. Therefore, when adifference arises in the magnitude of the high frequency electromotiveforce, the induced high frequency current flows at the conductor sidewhere the impedance is small. Further, at the microcomputer 110 of themicrocomputer circuit 100, there are NC pins that are terminals of themicrocomputer 110 that are not used in terms of the specifications, andthese NC pins are treated such that they are fixed to a predeterminedvoltage (in order to avoid an indefinite signal at which what voltagevalue (input value) is expressed is indefinite). In the case of thefirst exemplary embodiment, as the fixed state, the NC pins are DCconnected to the copper tape 190, and are processed so as to be in thedirections of outputting signals from the microcomputer 110 with themicrocomputer 110 sides being the output sides.

When high frequency plasma is generated within the plasma chamber, anelectric field (magnetic field) caused by the high frequency of thepower supply for plasma generation is generated within the space of theplasma chamber, and electromotive force is generated at the conductorportions within the plasma chamber. High frequency current flows due tothe potential difference of this electromotive force. The potentialdifference due to the electromotive force arises also in the electroniccircuit of DC operation that is set within the plasma. Further, highfrequency current flows within the electronic circuit due to thispotential difference, but when this current exceeds a given thresholdvalue, the operation of the electronic circuit of DC operation carriesout operation in accordance with the high frequency current.

In the first exemplary embodiment, the high frequency electromotiveforce that is generated in the plasma generation arises at the coppertape 190, and the copper tape 190 and both the positive side and thenegative side of the power supplying section 140 of the electroniccircuit of DC operation are connected via the capacitors 170 a (thepositive side), 170 b (the negative side). Due thereto, the highfrequency electromotive force generated within the electronic circuit ofDC operation is forcibly made to be the same potential, and highfrequency current, that arises due to the potential difference of thehigh frequency electromotive force generated due to plasma generationwithin the electronic circuit of DC operation, does not flow.

A first block diagram 300 of the microcomputer circuit 100 relating tothe first exemplary embodiment is shown in FIG. 3.

The first block diagram 300 is structured by the microcomputer 110, theinfrared light emitting diode (infrared LED) 130 b, the microcomputerreceiving section 120, sensors 310, and a voltage converting section 320(corresponding to the sensor signal receiving module 180). Further, themicrocomputer 110 is structured by a CPU (Central Processing Unit) 330,an IR interface section 340, an A/D converter 350, and the memory 360.Note that there are plural types of the memory 360, that are a ROM (ReadOnly Memory) in which programs for control for microcomputer control arestored, a RAM (Random Access Memory) in which data is temporarilystored, an NVRAM (Non-Volatile Random Access Memory) that is anon-volatile memory from which data can be read and to which data can bewritten, an EPROM (Erasable Programmable Read Only Memory) from whichdata can be deleted and to which data can be written any number oftimes, and the like.

The sensor signal receiving module 180, that receives the output values(analog values) from the sensors 310 that measure plasma parameters (andare set at respective locations within the semiconductor fabricatingdevice), is connected to the A/D converter 350 for converting intodigital signals, via the voltage converting section 320 such as aresistance voltage divider or a transformer or the like. Note that, ifthe output values from the sensors (the output voltages) are within therange of operational voltages of the microcomputer 110, it suffices tonot provide the voltage converting section 320, but there may be thevoltage converting section 320 that inputs the output voltages of thesignals received at the sensor signal receiving module 180 as are to theA/D converter 350. Further, the plasma parameters include the self biasvoltage Vdc and the like, and are, for example, the plasma temperature,the plasma density, the plasma potential, the electric field, theelectron density, the electron temperature and the like.

The A/D converter 350 is connected to the CPU 330 in order to performprocessing for storing the output values of the A/D converter 350(digital values) in the memory 360 that is set within the microcomputer110 (or may be at the exterior of the microcomputer 110).

The memory 360 is connected to the CPU 330.

Further, the IR interface section 340, that is for performingcommunications with a receiver for reading measured data, is connectedto the CPU 330.

A second block diagram 400 of the microcomputer receiver 120 of themicrocomputer 110 relating to the first exemplary embodiment is shown inFIG. 4.

The second block diagram 400 is structured by the microcomputer 110, themicrocomputer receiver 120, the IR signal receiving module 150, theinfrared light emitting diode (infrared LED) 130 b, the USB serialinterface 160, and a PC (Personal Computer) 420. Further, themicrocomputer receiver 120 is structured by a CPU 430 and an IRinterface section 440.

The IR signal receiving module 150 that is needed for IR communicationsis connected to the microcomputer receiver 120, and the infrared LED 130b and the IR signal receiving module 150 are connected. Further, themicrocomputer 110 also is connected to the microcomputer receiver 120.The microcomputer receiver 120 is connected to the USB serial interface160, and is connected from the USB serial interface 160 via a datatransmission cable to the commercially-available PC 420, in order totransfer received data to the commercially-available PC 420. The CPU 430within the microcomputer receiver 120 is connected to the IR interfacesection 440 within the microcomputer receiver 120, and to themicrocomputer 110 and the USB serial interface. The IR interface section440 within the microcomputer receiver 120 is connected to the CPU 320within the microcomputer receiver 120 and to the IR signal receivingmodule 150.

Operation of the first exemplary embodiment will be describedhereinafier.

The sensors 310 are set at respective locations within a semiconductorfabricating device, and have mechanisms that can transmit signalstherefrom to the sensor signal receiving module 180. Within thesemiconductor fabricating device, the sensors 310 measure, for example,plasma parameters such as the self bias voltage Vdc and the likegenerated in the plasma processing, as well as the potential of thewafer surface in the plasma processing, the potential generated withinthe fine pattern, and the like.

First, the sensors 310 transmit the various types of measurementinformation that are measured (e.g., the plasma parameters such as theself bias voltage Vdc and the like, and the potential of the wafersurface in the plasma processing, and the potential generated within thefine pattern, and the like) to the sensor signal receiving module 180 byusing a sensor signal transmitting module that transmits the measurementinformation from the sensors, or the like. Note that the method oftransmission at this time may be transmission by using an LED that emitslight of a wavelength different than the wavelength of the infrared LED130 b, or may be transmission by radio (in the case of radiotransmission, the sensor signal receiving module is a radio signalreceiving module).

The output voltage outputted from the sensor 310 via the sensor signalreceiving module 180 is the first measurement value, and passes throughthe voltage converting section 320 and is boosted or lowered within therange of operational voltage of the microcomputer 110 (if there is noneed to boost or lower within the range of operational voltage of themicrocomputer 110, the voltage converting section 320 may pass the firstmeasurement value through as is). Thereafter, the first measurementvalue, that is the output voltage from the sensor 310 that has beenboosted or lowered within the range of operational voltage, is, at theA/D converter 350, converted from an analog value (also called theanalog voltage value or analog data) into a digital value (also calledthe digital voltage value or digital data). The converted digital valueof the first measurement value is read by a designation register of theCPU 330. Due to the digital value that is read to the CPU 330 beingtransferred to a designated memory address, the digital value is storedin the memory 360 within the microcomputer 110 (the memory 360 may beset at the exterior of the microcomputer circuit 100).

After the digital value of the first measurement value is stored at thedesignated memory address of the memory 360 within the microcomputer110, a digital value of a second measurement value is outputted from thesensor 310 via the A/D converter 350 as a second measurement value thatis the next data. The digital value of the second measurement value isread by the designation register of the CPU 330 as an output value. Amemory address that is different from the memory address in which thefirst measurement value is stored is designated, and the digital value,that is the second measurement value read by the designation register ofthe CPU 330, is transmitted to the memory address of the memory 360 thatis designated from the designation register of the CPU 330, and isstored in the designated memory address of the memory 360.

After the digital value of the second measurement value is stored in thememory address of the memory 360, the above-described operations arerepeated in order to measure the next third measurement value. Therepeating of these operations is carried out until the memory addressesthat store data are full, or until the repeated operation is carried outfor a pre-designated measurement time period or number of times ofmeasurement. Note that, after the digital value of the first measurementvalue is stored at a memory address of the memory 360, a given timeperiod may be left free and a delay time period for performing theoperation of reading the second measurement value may be generated inorder to adjust the measurement cycle.

After measurement of all of the measurement values ends, themicrocomputer circuit 100 is taken-out to the exterior of the plasmachamber. Then, the PC 420 and the USB interface 160 are connected, andinstruction information for obtaining the measurement information storedin the microcomputer circuit 100 is transmitted from the PC 420 via theUSB interface 160 to the CPU 430 of the microcomputer receiver 120. Onthe basis of the instruction information transmitted from the PC 420, aspecific code from the CPU 430 of the microcomputer receiver 120 istransmitted from a wire to the fourth pin 114, and is received by theCPU 330 of the microcomputer 110. The specific code is transmitted fromthe wire to the fourth pin 114, and when the CPU 330 of themicrocomputer 110 recognizes receipt of the specific code, the CPU 330controls the infrared LED 130 b via the IR interface section 340 andcarries out IR transmission of all of the measurement values that arethe digital values stored in the memory 360. The IR signal receivingmodule 150 that is connected to the microcomputer receiver 120 receivesthe signal of the light of the infrared LED 130 b, and this signal istransmitted to the CPU 430 via the IR interface section 440 of themicrocomputer receiver 120.

Here, the specific code is transmitted from the microcomputer receiver120 by the wire via the fourth pin 114, but it is also possible to notconnect the wire to the fourth pin 114. For example, an infrared LED,whose wavelength is different than that of the infrared LED 130 b, maybe connected to the microcomputer receiver 120, and an IR signalreceiving module for receiving information from the infrared LED whosewavelength is different than that of the infrared LED 130 b may beconnected to the microcomputer 110, and IR transmission and receptionmay be carried out between the microcomputer receiver 120 and themicrocomputer 110. Or, the infrared LED 130 b that is connected to themicrocomputer 110 may be connected to the microcomputer receiver 120 aswell and used in common, and an IR signal receiving module may beconnected to the microcomputer 110 and IR transmission and receptioncarried out between the both (when either one is using the infrared LED130 b that is used in common, the infrared LED 130 b is set so as to notreceive signals from the other).

At the microcomputer receiver 120, the measurement values that weretransmitted and received from the IR signal receiving module 150 aretransferred to the designation register of the CPU 430. After beingtransferred to the designation register, the measurement values, thatwere transferred in binary or hexadecimal format, are converted intodecimal numbers. After the measurement values that were in binary orhexadecimal format are converted into decimal numbers, they aretransferred to a designated output port, and are sent to thecommercially-available PC 420 by wire by using the USB cable that isconnected to the USB serial interface. The PC 420 displays on a CRT(Cathode Ray Tube) display the measurement values that have beentransmitted in, or stores them in an accessory storage device. Note thatthe PC 420 may store the measurement values, that have been transmittedin, in an accessory storage device while displaying them on a CRTdisplay.

The stored measurement values in decimal format are subjected to generaldata processing of the PC 420 and are analyzed. For example, for theplasma parameters such as the self bias voltage Vdc and the likegenerated in the plasma processing, and the potential of the wafersurface in the plasma processing, and the potential generated within thefine pattern, and the like, the trends of in what cases and how thesevalues are changing are displayed on the CRT display of the PC 420 andanalyzed.

Further, after all of the data of the measurement values that themicrocomputer circuit 100 measured have been transmitted, a specificcode of end of transmission is transmitted from the microcomputercircuit 100. The microcomputer receiver 120 recognizes the specific codeof end of transmission, and when it recognizes the ending oftransmission, stops the receiving operation.

Note that the first exemplary embodiment describes a case in which,after measurement has ended, the microcomputer circuit 100 is taken-outto the exterior of the plasma chamber. However, after measurement ends,gates for wafer transport-in and transport-out may be opened, and forexample, the data may be received at the microcomputer receiver 120 thatis set within a load lock chamber, and the data of the measurementvalues may be transmitted to the microcomputer receiver 120 at theexterior by using a data transmitting device or the like. Further, inthe first exemplary embodiment, the real-time monitoring device includesthe microcomputer circuit 100 that includes the microcomputer 110 andthe like, as well as the Kapton tape 210, the sensors 310 and the PC420.

Accordingly, because the high frequency electromotive force within themicrocomputer circuit 100 becomes equal to the high frequencyelectromotive force that is generated in a vicinity of the microcomputercircuit 100, the dispersion in the high frequency electromotive forcegenerated within the microcomputer circuit 100 can be forcibly made tobe the same potential as the high frequency electromotive force in thevicinity of the microcomputer circuit 100.

As a result, flowing of high frequency current due to the potentialdifference of the high frequency electromotive force does not occur atthe microcomputer circuit 100, and therefore, the microcomputer circuit100 operates only by the potential difference of the DC power supplythat is supplied. Thus, the microcomputer 110 can stably perform theoperations that are programmed in advance in the memory 36 of themicrocomputer 110.

Further, there is no need for covering with a resin material in order toprevent high frequency current, that is due to regular high frequencyelectromotive force that arises due to a strong high frequency electricfield, from intruding into the circuit.

The high frequency electromotive force, that is generated in a vicinityof the microcomputer circuit 100, is generated at the copper tape 190,that is set at the periphery of the vicinity of the microcomputercircuit 100, and is forcibly made to be the same potential as the highfrequency electromotive force of the vicinity of the microcomputercircuit 100. Therefore, because the copper tape 190 is connected to theinterior of the microcomputer 110 via the power supplying section 140 ofthe microcomputer 110, there is no need to consider the effects on thesetting location due to the amount of the high frequency electromotiveforce that arises, or the like, and the copper tape 190 can be set atany location of the plasma chamber.

The program that carries out the desired operations at the microcomputer110 is incorporated in advance in the memory 360, and, due to themicrocomputer circuit 100 operating normally, the measurement data fromthe sensors is digitally processed. Due thereto, the transient statechanges from immediately after plasma generation can be accuratelymeasured. In more detail, because the measurement value samplinginterval of the program incorporated within the microcomputer circuit100 can be changed in the program, sudden changes in the transient stateimmediately after high frequency plasma generation can be measuredappropriately.

Moreover, a predetermined program is incorporated in the microcomputercircuit 100, to which is added a structure that causes stable operationin high frequency plasma, and the sensor outputs of the sensors areconverted into digital values in accordance with this program. Then, theconverted measurement values are stored in the memory 360, and, aftermeasurement ends, the microcomputer circuit 100 is taken-out to theexterior, and the measurement values that are stored in the memory 360are read-out at the microcomputer receiver 120. The problem relating tothe optical path of the light emitting element can thereby be overcome.It is possible to overcome the problem of not being able to observe thelight that is the signal, for example, in cases in which there is noobservation window at the plasma chamber, or in cases in which, at thetime of the wafer processing, the stage on which the wafer is located ismoved for the plasma processing and can no longer be viewed from theobservation window, or the like.

Because the sensor output values are converted into digital values,signal changes can be grasped more clearly than very weak signal changesby a light emitting element.

When the microcomputer circuit 100 of the first exemplary embodiment is,together with plural optical sensors, built into a semiconductorfabricating device (e.g., an etcher), the light emitting state of theplasma in the wafer processing can be monitored within the plasmageneration space. Due thereto, very weak and sudden plasma lightemitting changes, such as microarcing and abnormal discharge and thelike that are presumed to arise during plasma processing, can bemonitored on a wafer-by-wafer basis.

Further, by setting the microcomputer receiver 120 within the load lockchamber, the measurement values acquired by the microcomputer circuit100 can be transmitted to the microcomputer receiver 120 at the time ofwafer transport, and the measurement values received at themicrocomputer receiver 120 can be employed as wafer processing data inmanaging quality.

Second Exemplary Embodiment

A second exemplary embodiment of the present invention will be describedhereinafter.

In the second exemplary embodiment, structures that are the same as thestructures described in the first exemplary embodiment are denoted bythe same reference numerals, and (description of) these structures isomitted.

FIG. 5 is a block diagram of a real-time monitoring device 500 relatingto a second exemplary embodiment.

The real-time monitoring device 500 is structured by the PC 420, the USBserial interface 160, a microcomputer receiver 510, a semiconductorwafer processing device 520, and a remote controller 530. Further, thesensors 310 that measure at least the plasma parameters including selfbias voltage that are observed in the plasma processing within plasma522, and the potential of the wafer surface in the plasma processing,and the potential generated within the fine pattern, and a microcomputertransmitter 524 (microcomputer circuit) that acquires and storesmeasurement data that is the sensor outputs measured at the sensors 310,are provided at the semiconductor wafer processing device 520. Note thatthe semiconductor wafer processing device 520 is, for example, anetching device (an etcher), a CVD (Chemical Vapor Deposition) device, orthe like. Further, the plasma parameters include the self bias voltageVdc and the like, and are, for example, the plasma temperature, theplasma density, the plasma potential, the electric field, the electrondensity, the electron temperature and the like.

The sensors 310, that are set at respective locations at the interior ofthe semiconductor wafer processing device 520, and the microcomputertransmitter 524 are connected within the semiconductor wafer processingdevice 520. Further, the microcomputer receiver 510 is connected to thePC 420 via the USB serial interface 160. The remote controller 530 andthe microcomputer receiver 510 perform IR communications with themicrocomputer transmitter 524 of the semiconductor wafer processingdevice 520.

Note that, in the structure of the real-time monitoring device 500 shownin FIG. 5, the microcomputer transmitter 524 that is disposed within thesemiconductor wafer processing device 520 is (as a presupposedcondition) within an environment that is such that infrared rays are notblocked, so that transmission and reception of IR signals can be carriedout by communications (IR communications) by infrared rays with theremote controller 530 and the microcomputer receiver 510. For example,there is an observation window at the semiconductor wafer processingdevice 520, and a control signal is transmitted from the remotecontroller 530 by an IR signal, and the microcomputer transmitter 524that is disposed within the sealed semiconductor wafer processing device520 receives the control signal. Further, on the basis of the controlsignal that is an IR signal from the remote controller 530, themicrocomputer transmitter 524 carries out transmission of themeasurement data stored in the microcomputer transmitter 524 (themeasurement data transmitted from the sensors 310), by IR communicationsto the microcomputer receiver 510. The measurement data, that istransmitted from the microcomputer transmitter 524, is stored once atthe microcomputer receiver 510, and is transmitted to the PC 420 via theUSB serial interface 160.

FIG. 6 shows a signal block diagram of the remote controller 530relating to the second exemplary embodiment.

The signal block diagram of the remote controller 530 is structured by amicrocomputer 610, a battery 640, an infrared LED (infrared lightemitting diode) 650 that is an infrared ray transmitting unit, a firstSW (switch) 680, and a second SW 690. The microcomputer 610 isstructured by a CPU 630 and a program memory 660. Further, themicrocomputer 610 is an eight-pin-type IC, and has terminals forconnection that are a first pin 611, a second pin 612, a third pin 613,a fourth pin 614, a fifth pin 615, a sixth pin 616, a seventh pin 617,and an eighth pin 618.

The battery 640 is connected to the positive side and the negative sideof a power supply section of the microcomputer 610 via the first pin 611and the eighth pin 618, and supplies a power supply to the microcomputer610. Further, the first SW 680 is connected to the sixth pin 616, andthe signal from the first SW 680 is transmitted to the CPU 630. Notethat, here, the signal from the first SW 680 is a switch fortransmitting to the microcomputer transmitter 524 an IR signal forstarting measurement of the measurement data. The second SW 690 isconnected to the fifth pin 615, and the signal from the second SW 690 istransmitted to the CPU 630. Note that, here, the signal from the secondSW 690 is a switch for causing the microcomputer transmitter 524 totransmit the measurement data to the microcomputer receiver 510. Theinfrared LED 650 is connected to the second pin 612. On the basis of thesignals transmitted from the first SW 680 and the second SW 690, acontrol signal is transmitted by the CPU 630 via the second pin 612 forIR communications.

Note that the control signal is the IR signal to the microcomputertransmitter 524 for starting measurement of the measurement data, or isthe IR signal for causing the microcomputer transmitter 524 to transmitthe measurement data to the microcomputer receiver 510.

FIG. 7 shows a signal block diagram of the microcomputer transmitter 524relating to the second exemplary embodiment.

The signal block diagram of the microcomputer transmitter 524 isstructured by the copper tape 190, a microcomputer 710, batteries 740, afirst LED 750 a for status display, a second LED 750 b for statusdisplay, capacitors 770 a, 770 b, an IR receiving unit 780, and aninfrared LED 790. Further, the microcomputer 710 is structured by anEEPROM (Electronically Erasable and Programmable Read Only Memory) 720,a program memory 760, a CPU 730, and the A/D converter 350. Note thatthe EEPROM 720 is a ROM (Read Only Memory) whose contents can berewritten electrically. Further, the microcomputer 710 also is aneight-pin-type IC, and has terminals for connection that are a first pin711, a second pin 712, a third pin 713, a fourth pin 714, a fifth pin715, a sixth pin 716, a seventh pin 717, and an eighth pin 718.

The EEPROM 720, the program memory 760, and the A/D converter 350 arerespectively connected via the CPU 730. The CPU 730 is connected to thesecond pin 712, the third pin 713, the fourth pin 714, and the seventhpin 717. The A/D converter 350 is connected to the fifth pin 715 also.

One of the batteries 740 is connected to the first pin 711 by the onecapacitor 770 a, and the other battery 740 is connected to the eighthpin 718 via the one capacitor 770 b. Note that the batteries 740 areconnected to the positive side and the negative side of the power supplysection of the microcomputer 710 via the first pin 711 and the eighthpin 718, and supply power to the microcomputer 710. Further, the otherof the capacitor 770 a and the other of the capacitor 770 b areconnected to the copper tape 190. Note that the sixth pin 716 is an NCpin, and is connected to the copper tape 190. The IR receiving unit 780is connected to the fourth pin 714, and IR receives a control signalfrom the remote controller 530 and transmits it to the CPU 730. Thefirst LED 750 a for status display is connected to the second pin 712,and receives a status signal from the CPU 730. Similarly to the firstLED 750 a for status display, the second LED 750 b for status displayalso is connected to the third pin 713, and receives a status signalfrom the CPU 730. The infrared LED 790 is connected to the seventh pin717, and receives a signal for transmitting, by IR communications, themeasurement data from the CPU 730. The sensors 310 are connected to theA/D converter 350 via the fifth pin 715, and the sensor signals from thesensors 310 are transmitted to the A/D converter 350 via the fifth pin715.

FIG. 8 shows a signal block diagram of the microcomputer receiver 510relating to the second exemplary embodiment, and the USB interface 160and the PC 420.

The microcomputer receiver 510 is structured by a microcomputer 810, abattery 840, and an IR receiving unit 880. The microcomputer 810 isstructured by a CPU 830 and a program memory 860. Further, themicrocomputer 810 is an eight-pin-type IC, and is provided withterminals for connection that are a first pin 811, a second pin 812, athird pin 813, a fourth pin 814, a fifth pin 815, a sixth pin 816, aseventh pin 817 and an eighth pin 818.

The CPU 830 is connected to the program memory 860, the second pin 812,and the fourth pin 814.

The battery 840 is connected to the first pin 811 and the eighth pin818, and is connected to the positive side and the negative side of thepower supply section of the microcomputer 810, and supplies power to themicrocomputer 810. The IR receiving unit 880 is connected to the fourthpin 814, and receives measurement data from the microcomputertransmitter 524, and transmits it to the microcomputer 810. The USBserial interface 160 is connected to the second pin 812 and the PC 420,and the measurement data that is transmitted-in from the second pin 812is transmitted to the PC 420 via the USB interface 160. Note that thethird pin 813, the fifth pin 815, the sixth pin 816, and the seventh pin817 are NC pins.

Operation of the second exemplary embodiment will be describedhereinafter.

FIG. 9 shows a first flowchart 900 that shows the control of the remotecontroller 530 relating to the second exemplary embodiment.

In step 902, the power supply of the remote controller 530 is turned on.In more detail, the power supply of the remote controller 530 is turnedon at the exterior of the semiconductor wafer processing device 520.

In step 904, initial setting is carried out. In more detail,initialization of the program is carried out, and preparations arecarried out for IR transmitting a control signal that is a start signalfor measurement of the measurement data to the microcomputer transmitter524, or a measurement data transmission request signal to transmit themeasurement data from the microcomputer transmitter 524 to themicrocomputer receiver 510. For example, 0 is clear or is the parametersetting or the like.

In step 906, it is judged whether or not there has been SW input. Inmore detail, it is judged whether or not the IR signal for measurementstart of the measurement data to the microcomputer transmitter 524 hasbeen inputted by the first SW 680, or whether or not the IR signal forcausing the microcomputer transmitter 524 to transmit the measurementdata to the microcomputer receiver 510 has been inputted by the secondSW 690. If the IR signals have been inputted by the first SW 680 and thesecond SW 690, the routine proceeds to step 908. If the IR signals havenot been inputted by the first SW 680 and the second SW 690, step 906 isrepeated and the routine stands-by until the SW are on.

In step 908, IR signal emission is carried out. In more detail, if theIR signal has been inputted by the first SW 680, an IR signal to themicrocomputer transmitter 524 for starting measurement of themeasurement data is emitted. Similarly, if the IR signal has beeninputted by the second SW 690, the IR signal for causing themicrocomputer transmitter 524 to transmit the measurement data to themicrocomputer receiver 510 is emitted.

FIG. 10 shows a second flowchart 1000 showing the control of themicrocomputer transmitter 524 relating to the second exemplaryembodiment.

In step 1002, the power supply of the microcomputer transmitter 524 isturned on. In more detail, the power supply of the microcomputertransmitter 524 is turned on at the exterior of the semiconductor waferprocessing device 520, and the microcomputer transmitter 524 is locatedwithin the semiconductor wafer processing device 520. Note that themicrocomputer transmitter 524 is located on the wafer to be processed onthe stage of the semiconductor wafer processing device 520.

In step 1004, initial setting is carried out. In more detail,initialization of the program is carried out, and preparations arecarried out so that a start signal for measurement of the measurementdata from the remote controller 530 can be received at any time. Forexample, 0 is clear or is the parameter setting or the like.

In step 1006, it is judged whether or not a start signal has beenreceived. In more detail, it is judged whether or not the IR receivingunit 780 has received an IR signal (the IR signal to the microcomputertransmitter 524 for starting measurement of the measurement data) fromthe first SW 680 from the remote controller 530, and the control signalfor starting acquisition of the measurement data has been received. Notethat the IR receiving unit 780 is a unit that receives the controlsignals that are transmitted in by IR signals from the remote controller530 (the start signal, or the signal requesting transmission ofmeasurement data), and these control signals are transmitted to the CPU730 via the fourth pin 714 of the microcomputer 710. If the start signalis received, the routine moves on to step 1008. If the start signal isnot received, step 1006 is repeated and the routine stands-by.

In step 1008, the measurement data is measured. In more detail, the CPU730 that governs control of the microcomputer 710 carries outmeasurement of the measurement data that is transmitted from the sensors310, on the basis of the control program stored in the program memory760. The sensors 310 are disposed at respective locations within thesemiconductor wafer processing device 520, and, within the semiconductorwafer processing device 520, measure the measurement data that are, forexample, plasma parameters such as the self bias voltage Vdc and thelike generated in the plasma processing, and the potential of the wafersurface in the plasma processing, and the potential generated within thefine pattern, and the like. Then, the aforementioned respective types ofmeasurement data that the sensors 310 have measured are transmitted tothe microcomputer transmitter 524.

In step 1010, the measurement data is stored in the memory. In moredetail, on the basis of the control program stored in the program memory760, the CPU 730 converts the signal from the sensor 310, that istransmitted in from the fifth pin 715 and is measurement data that is ananalog signal, into a digital signal by the A/D converter 350, andstores it in the EEPROM 720. The sensor output (the output voltage) thatis outputted from the sensor 310 is a first measurement value, and, viaa voltage converting section or the like, is boosted or lowered withinthe range of operational voltage of the microcomputer transmitter 524(if there is no need to boost or lower within the range of operationalvoltage of the microcomputer transmitter 524, the voltage convertingsection or the like may pass the first measurement value through as is).Thereafter, the first measurement value, that is the output voltage fromthe sensor 310 that has been boosted or lowered within the range ofoperational voltage, is, at the A/D converter 350, converted from ananalog voltage value into a digital voltage value. The converted digitalvoltage value of the first measurement value is read by a designationregister of the CPU 730. Due to the digital value that is read to theCPU 730 being transferred to a designated memory address, the digitalvalue is stored in the EEPROM 720.

After the digital value of the first measurement value is stored at thedesignated memory address of the EEPROM 720 within the microcomputer710, a digital value of a second measurement value is outputted from thesensor 310 via the A/D converter 350 as a second measurement value thatis the next data. The digital value of the second measurement value isread as an output value by a designation register of the CPU 730. Amemory address that is different from the memory address in which thefirst measurement value is stored is designated, and the digital value,that is the second measurement value read by the designation register ofthe CPU 730, is transferred to the memory address of the EEPROM 720 thatis designated from the designation register of the CPU 730, and isstored in that designated memory address.

After the digital value of the second measurement value is stored in thememory address of the EEPROM 720, the above-described operations arerepeated in order to measure the next third measurement value. Therepeating of these operations is carried out until the memory addressesthat store data are full, or until the repeated operation is carried outfor a pre-designated measurement time period or number of times ofmeasurement. Note that, after the digital value of the first measurementvalue is stored at a memory address of the EEPROM 720, a given timeperiod may be left free and a delay time period for performing theoperation of reading the second measurement value may be generated inorder to adjust the measurement cycle.

In step 1012, it is judged whether or not measurement has ended. In moredetail, it is judged whether a predetermined number of measurement datahave been acquired and stored in the EEPROM 720, or whether measurementdata have been stored to the maximum capacity of the EEPROM 720. Whenmeasurement ends and a predetermined number of the measurement data arestored in the EEPROM 720 or the measurement data are stored to themaximum capacity of the EEPROM 720, the routine moves on to step 1014.If measurement is not finished, the routine returns to step 1008.

In step 1014, it is judged whether or not a transmission request signalfor the measurement data has been received. In more detail, it is judgedwhether or not the IR signal from the second SW 690 of the remotecontroller 530 has been received, and the control signal fortransmitting the measurement data to the microcomputer receiver 510 (thetransmission request signal for the measurement data) has been received.If the transmission request signal for the measurement data has beenreceived, the routine moves on to step 1016. If the transmission requestsignal for the measurement data has not been received, step 1014 isrepeated and the routine stands-by.

In step 1016, transmitting of the measurement data is carried out. Inmore detail, on the basis of the IR signal from the second SW 690 of theremote controller 530, the measurement data stored in the EEPROM 720 ofthe microcomputer transmitter 524 is transmitted to the microcomputerreceiver 510. Note that the measurement data that is stored in theEEPROM 720 is transmitted from the CPU 730 to the microcomputer receiver510 via the seventh pin 717 and by an IR signal by the infrared LED 790.

In step 1018, it is judged whether or not transmitting of themeasurement data has ended. In more detail, it is judged whether themicrocomputer receiver 510 has received all of the measurement datastored in the EPROM 720 of the microcomputer transmitter 524. Forexample, if the microcomputer receiver 510 has received data expressingthe final end data of the measurement data, it is judged that thetransmitting of the measurement data has ended. If the microcomputerreceiver 510 has not received the data expressing the end data, it isjudged that the transmitting of the measurement data has not ended.Further, if the transmitting of the measurement data has ended, theroutine returns to step 1006, and preparations for measurement of thenext measurement data are carried out. If the transmitting of themeasurement data has not ended, the routine returns to step 1016, andthe microcomputer receiver 510 repeats reception of the transmittedmeasurement data.

Note that, at the first LED 750 a for status display and the second LED750 b for status display, the situation of the program operating (calledthe status hereinafter) is known from the way that the LEDs are lit. Forexample, the first LED 750 a for status display and the second LED 750 bfor status display are LEDs that, by being lit, give notice of thestatus, such as a case in which an activation signal or a transmissionsignal or the like has been transmitted in, a case in which the A/Dconverter or the like is operating, a case in which data is stored inthe EEPROM 720, or the like. Further, because it is presumed that themicrocomputer transmitter 524 is located on the semiconductor wafer thatis undergoing processing within the semiconductor wafer processingdevice 520, parts whose thicknesses are suppressed to less than or equalto several millimeters (various types of compact LEDS, the compactbatteries 740, the compact capacitors 770 a, 770 b such as chipcapacitors, and the microcomputer 710 that has been made compact) areused to achieve compactness.

FIG. 11 shows a third flowchart 1100 showing the control of themicrocomputer receiver 510 relating to the second exemplary embodiment.

In step 1102, the power supply of the microcomputer receiver 510 isturned on. In more detail, the power supply of the microcomputerreceiver 510 is turned on at the exterior of the semiconductor waferprocessing device 520.

In step 1104, initial setting is carried out. In more detail,initialization of the program is carried out, and preparations arecarried out so that measurement data from the microcomputer transmitter524 can be received at any time. For example, 0 is clear or is theparameter setting or the like.

In step 1106, screen setting of the PC 420 is carried out. In moredetail, the measurement data generated by the program of themicrocomputer is read, and setting is carried out to display it on thescreen of the PC 420. For example, at the screen of the PC 420,accessory setting of CH (channel) 1, CH2, and the like is carried out,and the data can be displayed as a table by using application softwareor the like. Note that the PC 420 has only the function of receiving,via the USB serial interface 160, the measurement data that istransmitted to the microcomputer receiver 510 from the microcomputertransmitter 524, and only edits the received measurement data by makingit into a table or the like.

In step 1108, it is judged whether or not a start signal has beenreceived. In more detail, it is judged whether or not a start bit hasbeen sensed from the microcomputer transmitter 524. For example, aspecific data signal is inserted at the end of the measurement data thatis transmitted from the microcomputer transmitter 524, and this signalis sensed, and it is judged whether or not a start bit that is a startsignal is sensed.

In step 1110, fetching of the measurement data is carried out. In moredetail, if the start signal is received, acquisition of the measurementdata that has been transmitted from the microcomputer transmitter 524 isstarted.

In step 1112, BCD (Binary Coded Decimal) conversion is carried out. Inmore detail, the measurement data transmitted from the microcomputertransmitter 524 is BCD-converted by the CPU 830, and the measurementdata is handled as binary data.

In step 1114, the measurement data is transferred to the PC 420. In moredetail, the measurement data, that was BCD-converted and made intobinary data in step 1012, is transferred to the PC 420 via the USBserial interface 160.

In step 1116, it is judged whether or not a predetermined number ofmeasurement data have been received. In more detail, it is judgedwhether or not the microcomputer receiver 510 has received apredetermined number of the measurement data that have been transmittedfrom the microcomputer transmitter 524 to the microcomputer receiver510. Note that, rather than judging whether or not the predeterminednumber of measurement data have been received, it may be judged whetheror not measurement data, of the amount of the capacity of the EEPROM 720that is incorporated in the microcomputer 710 of the microcomputertransmitter 524, have been received.

In step 1118, an end signal is received. In more detail, an end signal,that expresses that the measurement data transmitted from themicrocomputer transmitter 524 to the microcomputer receiver 510 is thefinal data, is received.

In step 1120, it is judged whether or not receipt of the nextmeasurement data is to be carried out. In more detail, after receipt ofthe end signal in step 1118, it is judged whether or not reception ofthe next measurement data is to be carried out. If reception of the nextmeasurement data is to be carried out, the routine moves on to step1106, and screen setting of the PC 420 is carried out. If reception ofthe next measurement data is not to be carried out, the routine returnsto the initial setting of step 1104, and stands-by until measurementdata is acquired.

Note that, at the PC 420, the measurement values that are transmittedmay be displayed-on the CRT display, or may be stored in an accessorystorage device. Further, the measurement values that are stored aresubjected to general data processing of the PC 420, and are analyzed.For example, for the plasma parameters such as the self bias voltage Vdcand the like generated in the plasma processing, and the potential ofthe wafer surface in the plasma processing, and the potential generatedwithin the fine pattern, and the like, the trends of in what cases andhow these values are changing within the semiconductor wafer processingdevice 520 are displayed on the CRT display of the PC 420 by usingapplication software or the like, and are analyzed.

Accordingly, in the second exemplary embodiment, because the highfrequency electromotive force within the microcomputer 710 becomes equalto the high frequency electromotive force that is generated in avicinity of the microcomputer 710, the dispersion in the high frequencyelectromotive force generated within the microcomputer 710 can forciblybe made to be the same potential as the high frequency electromotiveforce of the vicinity of the microcomputer 710.

As a result, flowing of high frequency current due to the potentialdifference of the high frequency electromotive force does not occur atthe microcomputer 710, and therefore, the microcomputer 710 operatesonly by the potential difference of the DC power supply that issupplied. Thus, the microcomputer 710 can stably perform the operationsthat are programmed in advance in the program memory 760.

Further, there is no need for covering with a resin material in order toprevent the high frequency current, that is due to regular highfrequency electromotive force that arises due to a strong high frequencyelectric field, from intruding into the circuit.

The high frequency electromotive force, that is generated in a vicinityof the microcomputer 710, is generated at the copper tape 190 that isset at the periphery of the vicinity of the microcomputer 710, and isforcibly made to be the same potential as the high frequencyelectromotive force of the vicinity of the microcomputer 710. Therefore,because the copper tape 190 is connected to the interior of themicrocomputer 710 via the power supplying section 740 of themicrocomputer 710, there is no need to consider the effects on thesetting location due to the amount of the high frequency electromotiveforce that arises, or the like, and the microcomputer transmitter 524including the microcomputer 710 can be set at any location of thesemiconductor wafer processing device 520. Because the microcomputertransmitter 524 that includes the microcomputer 710 also can be made tobe small, it also can be located in the gap of several millimeters abovethe slice that is being processed by the semiconductor wafer processingdevice 520.

Because the measurement value sampling interval of the programincorporated in the program memory 760 of the microcomputer 710 can bechanged in the program, sudden changes in the transient stateimmediately after high frequency plasma generation can be measuredappropriately.

Because the sensor output values are converted into digital values,signal changes can be grasped more clearly than very weak signal changesby a light emitting element.

When the microcomputer 710 of the second exemplary embodiment is,together with plural optical sensors, built into the semiconductor waferprocessing device 520, the light emitting state of the plasma during thewafer processing can be monitored within the plasma generation space.Due thereto, very weak and sudden plasma light emitting changes, such asmicroarcing and abnormal discharge and the like that are presumed toarise during plasma processing, can be monitored on a wafer-by-waferbasis.

Further, by setting the microcomputer receiver 510 within the load lockchamber, the measurement values acquired by the microcomputer 610 can betransmitted to the microcomputer receiver 510 at the time of wafertransport, and the measurement values received at the microcomputerreceiver 510 can be employed as wafer processing data in managingquality.

As described above, in accordance with the present invention, plasmaparameters from immediately after plasma generation, or output data of asensor that measures the potential of a processed wafer surface, can bestably collected and stored in a memory and transferred to the exteriorof a plasma chamber.

1. A real-time monitoring device comprising: a microcomputer thatmonitors changes during plasma processing in a potential of asemiconductor wafer surface that are read by a sensor; a conductordisposed in a vicinity of the microcomputer; and a capacitor thatconnects the conductor and a power supply connection terminal of themicrocomputer.
 2. A real-time monitoring device according to claim 1,wherein: the microcomputer collects sensor outputs of sensors that aredisposed at respective locations within a semiconductor fabricatingdevice, and in a plasma process used in a semiconductor fabricatingprocess, senses and measures at least one of plasma parameters includingself bias voltage, a potential of a plasma processed wafer surface, or apotential generated within a fine pattern, and the microcomputer is partof a microcomputer circuit that controls a monitoring operation ofsensor outputs in the plasma process; and the conductor is disposed in avicinity of a circuit whose main body is the microcomputer and thatcomprises a plurality of electronic parts.
 3. The real-time monitoringdevice according to claim 1, wherein, when there is an unused terminalat the microcomputer, the unused terminal and the conductor are directlyconnected, or the unused terminal is connected to a negative powersupply side via a resistor.
 4. The real-time monitoring device accordingto claim 2, wherein, when there is an unused terminal at themicrocomputer, the unused terminal and the conductor are directlyconnected, or the unused terminal is connected to a negative powersupply side via a resistor.
 5. A real-time monitoring device comprising:a microcomputer that monitors changes during plasma processing in apotential of a semiconductor wafer surface that are read by a sensor,wherein a connecting portion of a direct current power supply that issupplied to the microcomputer has a potential equal to a high frequencyvoltage induced by plasma.
 6. The real-time monitoring device accordingto claim 5, wherein, when there is an unused terminal at themicrocomputer, the unused terminal is directly connected to a conductor,or is connected to a negative power supply portion via a resistor. 7.The real-time monitoring device according to claim 5, wherein aconductor is disposed in a vicinity of the microcomputer, and acapacitor is connected between the conductor and a power supplyconnection terminal of the microcomputer, and a connecting portion of adirect current power supply that is supplied to the microcomputer has apotential equal to a high frequency voltage induced by plasma.
 8. Areal-time monitoring device according to claim 5, wherein: themicrocomputer collects sensor outputs of sensors that are disposed atrespective locations within a semiconductor fabricating device, and in aplasma process used in a semiconductor fabricating process, senses andmeasures at least one of plasma parameters including self bias voltage,a potential of a plasma processed wafer surface, or a potentialgenerated within a fine pattern; and a conductor is disposed in avicinity of a circuit whose main body is the microcomputer and thatcomprises a plurality of electronic parts, and the connecting portion ofa direct current power supply supplied to the microcomputer is connectedby a capacitor to the conductor, the microcomputer being part of amicrocomputer circuit that controls a monitoring operation of sensoroutputs in the plasma process, and the conductor having a potentialequal to a high frequency voltage induced by plasma, when there is anunused terminal at the microcomputer, the unused terminal is directlyconnected to the conductor or is connected to a negative power supplyportion via a resistor, and operationally unstable signal transmittingand receiving operations caused by a high frequency electric field ofthe microcomputer circuit are stabilized.
 9. A control method formeasuring a potential used in a microcomputer circuit in a real-timemonitoring device, the real-time monitoring device comprising: amicrocomputer that collects sensor outputs of sensors that are disposedat respective locations within a semiconductor fabricating device andthat, in a plasma process used in a semiconductor fabricating process,sense and measure at least one of plasma parameters including self biasvoltage, a potential of a plasma processed wafer surface, or a potentialgenerated within a fine pattern; and a conductor disposed in a vicinityof a circuit whose main body is the microcomputer and that comprises aplurality of electronic parts, where the conductor and a power supplyconnection terminal of the microcomputer are connected via a capacitor,the microcomputer being part of a microcomputer circuit that controls amonitoring operation of sensor outputs in the plasma process, the methodcomprising: inputting the sensor outputs; performing AD conversion thatconverts the sensor outputs from analog signals into digital signals;storing measurement data corresponding to digital signals of theAD-converted sensor outputs; and in accordance with a specific signal,performing IR transmission that transmits, by infrared rays, the storedmeasurement data.
 10. The real-time monitoring device according to claim2, wherein the microcomputer circuit comprises a power supply section, acapacitor, an infrared ray receiving unit, and an infrared raytransmitting unit, and the real-time monitoring device furthercomprises: a control signal transmitting section that transmits acontrol signal generated by infrared rays for controlling themicrocomputer circuit, such that the control signal is received by theinfrared ray receiving unit; a sensor output receiving section thatreceives the sensor outputs from the infrared ray transmitting unit ofthe microcomputer circuit; and an analyzing section that analyzes thesensor outputs received by the sensor output receiving section.
 11. Thereal-time monitoring device according to claim 3, wherein themicrocomputer circuit comprises a power supply section, a capacitor, aninfrared ray receiving unit, and an infrared ray transmitting unit, andthe real-time monitoring device further comprises: a control signaltransmitting section that transmits a control signal generated byinfrared rays for controlling the microcomputer circuit, such that thecontrol signal is received by the infrared ray receiving unit; a sensoroutput receiving section that receives the sensor outputs from theinfrared ray transmitting unit of the microcomputer circuit; and ananalyzing section that analyzes the sensor outputs received by thesensor output receiving section.
 12. A real-time monitoring deviceaccording to claim 2, further comprising: a power supply section, aninfrared ray receiving unit, and an infrared ray transmitting unit; acontrol signal transmitting section that transmits a control signalgenerated by infrared rays for controlling the microcomputer circuit,such that the control signal is received by the infrared ray receivingunit; a sensor output receiving section that receives, from the infraredray receiving unit, the sensor outputs from the infrared raytransmitting unit of the microcomputer circuit; and an analyzing sectionthat analyzes the sensor outputs received by the sensor output receivingsection, wherein, on the basis of the control signal from the controlsignal transmitting section, the microcomputer circuit acquires thesensor outputs, and stores the acquired sensor outputs temporarily in asensor output storing section, and, on the basis of the control signalfrom the control signal transmitting section, the microcomputer circuittransmits the sensor outputs by using the infrared ray transmittingunit.
 13. The real-time monitoring device according to claim 12,wherein, when there is an unused terminal at the microcomputer, theunused terminal and the conductor are directly connected, or the unusedterminal is connected to a negative power supply section via a resistor.14. A real-time monitoring device according to claim 2, wherein themicrocomputer circuit comprises: an inputting section that inputs thesensor outputs; an AD converting section that performs AD conversionthat converts the sensor outputs inputted by the inputting section fromanalog signals into digital signals; a storing section that storesmeasurement data corresponding to digital signals of the AD-convertedsensor outputs by the AD converting section; an IR transmitting sectionthat performs, in accordance with a specific signal, IR transmissionthat transmits, by infrared rays, the stored measurement data; and acontrol section that controls the inputting section, the AD convertingsection, the storing section and the IR transmitting section, thecontrol section that executes the AD conversion, the storing of theAD-converted measurement data, and, in response to the specific signal,the IR transmission of the stored measurement data.